Simulation of a GNR-FET

A field effect transistor is simulated in the case the active area is made by a single graphene nanoribbon. At variance with large area graphene, an energy gap is present and this should improve the performance of the device as transistor. A drift-diffusion model which includes the degenerate effects, coupled to the Poisson equation for the electrostatic potential, is used. The mobility models are obtained, by a fitting procedure, solving numerically the semiclassical Boltzmann equation for the graphene nanoribbon, including also the edges scattering besides the electron-phonon interactions.