A peculiar geometry for a graphene double gate field effect transistor is proposed. It allows us to overcome the problems encountered for a standard MOSFET geometry due to the zero gap in monolayer graphene. It is found that for a wide range of the gate voltage the current is in an off state with a ratio current-on over current-off of about 10^4.
Simulations of a Novel DG-GFET
Giovanni Nastasi
;
2021-01-01
Abstract
A peculiar geometry for a graphene double gate field effect transistor is proposed. It allows us to overcome the problems encountered for a standard MOSFET geometry due to the zero gap in monolayer graphene. It is found that for a wide range of the gate voltage the current is in an off state with a ratio current-on over current-off of about 10^4.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
