Recently, the improvement of the semiconductor devices to achieve higher efficiency and higher power density has risen to interest. Si carbide and gallium nitride offer faster switching frequency and lower losses; however, the knowledge of the behaviour of these devices is not mature. In this paper, a system for fast charging of batteries for electric vehicles based on an isolated DC-DC converter equipped with both SiC and GaN devices is presented and an interesting experimental comparison among these two technologies will be given in terms of dynamic performances, electromagnetic compatibility, stability, efficiency, and so on.
Comparison between SiC and GaN switching devices in fast-recharging systems for electric vehicles
Garraffa, Giovanni;Costantino, Giuseppe;
2023-01-01
Abstract
Recently, the improvement of the semiconductor devices to achieve higher efficiency and higher power density has risen to interest. Si carbide and gallium nitride offer faster switching frequency and lower losses; however, the knowledge of the behaviour of these devices is not mature. In this paper, a system for fast charging of batteries for electric vehicles based on an isolated DC-DC converter equipped with both SiC and GaN devices is presented and an interesting experimental comparison among these two technologies will be given in terms of dynamic performances, electromagnetic compatibility, stability, efficiency, and so on.File in questo prodotto:
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