Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.

Silicon carbide for future intense luminosity nuclear physics investigations

G. Lanzalone;A. Muoio;
2019

Abstract

Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11387/137949
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